Toshiba introduces 1200V SiC Schottky Barrier Diodes for improved industrial power efficiency
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added the “TRSxxx120Hx Series” of 1200V products to its lineup of third-generation silicon carbide (SiC) Schottky barrier diodes (SBD) for industrial equipment, such as photovoltaic inverters, EV charging stations and switching power supplies. Toshiba today started shipments of the ten new products in the series, five in a TO-247-2L package and five in a TO-247 package.